U309 TO-18 3L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
WIDEBAND, HIGH GAIN, SINGLE, N-
$4.81
Available to order
Reference Price (USD)
1+
$4.81000
500+
$4.7619
1000+
$4.7138
1500+
$4.6657
2000+
$4.6176
2500+
$4.5695
Exquisite packaging
Discount
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The U309 TO-18 3L JFET transistor by Linear Integrated Systems, Inc. exemplifies excellence in Discrete Semiconductor Products. This P-channel/N-channel device features breakthrough noise performance (sub-1nV/ Hz) and unmatched parameter consistency. The product's robust design includes integrated gate protection and thermal stabilization features. Primary markets include professional audio consoles, seismographic equipment, and ultra-precision voltage references. Specific circuit applications include chopper amplifiers, logarithmic converters, and nuclear magnetic resonance detectors. With its military-qualified packaging and extended reliability testing, the U309 TO-18 3L has become the JFET of choice for aerospace contractors and scientific research institutions worldwide.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Resistance - RDS(On): 35 Ohms
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18-3
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