UCC27212DPRT
Texas Instruments
Texas Instruments
IC GATE DRVR HALF-BRIDGE 10WSON
$5.12
Available to order
Reference Price (USD)
1+
$5.12000
500+
$5.0688
1000+
$5.0176
1500+
$4.9664
2000+
$4.9152
2500+
$4.864
Exquisite packaging
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Texas Instruments presents the UCC27212DPRT as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 7V ~ 17V
- Logic Voltage - VIL, VIH: 1.6V, 2.3V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 100 V
- Rise / Fall Time (Typ): 7.8ns, 6ns
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WDFN Exposed Pad
- Supplier Device Package: 10-WSON (4x4)
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