UCC27511DBVT
Texas Instruments
Texas Instruments
IC GATE DRVR LOW-SIDE SOT23-6
$1.69
Available to order
Reference Price (USD)
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$1.69000
500+
$1.6731
1000+
$1.6562
1500+
$1.6393
2000+
$1.6224
2500+
$1.6055
Exquisite packaging
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Texas Instruments presents the UCC27511DBVT as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 18V
- Logic Voltage - VIL, VIH: 1V, 2.4V
- Current - Peak Output (Source, Sink): 4A, 8A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 8ns, 7ns
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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