UF3SC120009K4S
UnitedSiC
UnitedSiC
SICFET N-CH 1200V 120A TO247-4
$86.77
Available to order
Reference Price (USD)
1+
$86.77000
500+
$85.9023
1000+
$85.0346
1500+
$84.1669
2000+
$83.2992
2500+
$82.4315
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The UF3SC120009K4S from UnitedSiC sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to UnitedSiC's UF3SC120009K4S for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 789W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
Related Products
IXYS
IXTP1N100P
Fairchild Semiconductor
FDP10AN06A0
Toshiba Semiconductor and Storage
TK155A65Z,S4X
Sanken
EKI07174
Diodes Incorporated
DMN2310U-7
Infineon Technologies
IPP60R125P6XKSA1
Alpha & Omega Semiconductor Inc.
AO3414
Texas Instruments
TPIC5403DW
onsemi
FDN359AN
STMicroelectronics