UF3SC120016K4S
UnitedSiC
UnitedSiC
SICFET N-CH 1200V 107A TO247-4
$56.25
Available to order
Reference Price (USD)
1+
$56.25000
500+
$55.6875
1000+
$55.125
1500+
$54.5625
2000+
$54
2500+
$53.4375
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Discover the UF3SC120016K4S from UnitedSiC, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the UF3SC120016K4S ensures reliable performance in demanding environments. Upgrade your circuit designs with UnitedSiC's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 517W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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