UF4SC120030K4S
UnitedSiC
UnitedSiC
1200V/30MOHM SIC STACKED FAST CA
$26.83
Available to order
Reference Price (USD)
1+
$26.83000
500+
$26.5617
1000+
$26.2934
1500+
$26.0251
2000+
$25.7568
2500+
$25.4885
Exquisite packaging
Discount
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The UF4SC120030K4S by UnitedSiC is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the UF4SC120030K4S is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 800 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 341W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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