UGB8DT-E3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO263AB
$1.37
Available to order
Reference Price (USD)
800+
$0.80259
1,600+
$0.65186
2,400+
$0.61418
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the UGB8DT-E3/81 single rectifier diode by Vishay General Semiconductor - Diodes Division, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The UGB8DT-E3/81 is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose Vishay General Semiconductor - Diodes Division's UGB8DT-E3/81 for unmatched quality and performance in discrete semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Inventchip
IV1D06006P3
Panjit International Inc.
SS2040FL-AU_R1_000A1
Solid State Inc.
1N2445R
Taiwan Semiconductor Corporation
SR204 A0G
Diodes Incorporated
SBRT20M60SP5-13D
Panjit International Inc.
MBR6150_T0_00001
onsemi
RHRG3060-F085
Toshiba Semiconductor and Storage
CRS03(TE85L,Q,M)
NTE Electronics, Inc
NTE6155
Microchip Technology