UJ3D06510TS
UnitedSiC
UnitedSiC
650V 10A SIC SCHOTTKY DIODE G3,
$3.86
Available to order
Reference Price (USD)
1+
$3.86000
500+
$3.8214
1000+
$3.7828
1500+
$3.7442
2000+
$3.7056
2500+
$3.667
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with the UJ3D06510TS single rectifier diode from UnitedSiC. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the UJ3D06510TS delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. UnitedSiC's UJ3D06510TS is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 650 V
- Capacitance @ Vr, F: 327pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Taiwan Semiconductor Corporation
US1JH
Vishay General Semiconductor - Diodes Division
RMPG06K-E3/73
Diodes Incorporated
ES1J-13-F
Vishay General Semiconductor - Diodes Division
B360A-M3/5AT
Taiwan Semiconductor Corporation
S4A
Comchip Technology
SS520B-HF
IXYS
DSEP30-06A
GeneSiC Semiconductor
MBRH20080
Vishay General Semiconductor - Diodes Division
VS-E5PX6012L-N3
IXYS