UJ3N120035K3S
UnitedSiC
UnitedSiC
1200V 35 MOHM SIC JFET, G3, N-ON
$29.30
Available to order
Reference Price (USD)
1+
$29.30000
500+
$29.007
1000+
$28.714
1500+
$28.421
2000+
$28.128
2500+
$27.835
Exquisite packaging
Discount
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The UJ3N120035K3S JFET transistor by UnitedSiC exemplifies excellence in Discrete Semiconductor Products. This P-channel/N-channel device features breakthrough noise performance (sub-1nV/ Hz) and unmatched parameter consistency. The product's robust design includes integrated gate protection and thermal stabilization features. Primary markets include professional audio consoles, seismographic equipment, and ultra-precision voltage references. Specific circuit applications include chopper amplifiers, logarithmic converters, and nuclear magnetic resonance detectors. With its military-qualified packaging and extended reliability testing, the UJ3N120035K3S has become the JFET of choice for aerospace contractors and scientific research institutions worldwide.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 1200 V
- Drain to Source Voltage (Vdss): 1200 V
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: 63 A
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V
- Resistance - RDS(On): 45 mOhms
- Power - Max: 429 W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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