UJ3N120070K3S
UnitedSiC
UnitedSiC
1200V 70 MOHM SIC JFET, G3, N-ON
$15.94
Available to order
Reference Price (USD)
1+
$15.94000
500+
$15.7806
1000+
$15.6212
1500+
$15.4618
2000+
$15.3024
2500+
$15.143
Exquisite packaging
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UnitedSiC's UJ3N120070K3S sets new standards for JFET performance in the Discrete Semiconductor Products market. This depletion-mode field-effect transistor features specially processed silicon for minimal parameter dispersion and maximum yield. The innovative design reduces gate leakage current to femtoampere levels while maintaining fast switching characteristics. Primary applications include nuclear instrumentation, submarine cable repeaters, and satellite communication systems. The UJ3N120070K3S also excels in specialized uses like cryogenic electronics and radiation-hardened circuits. With its gold-metallized contacts and hermetic packaging options, this JFET is the preferred choice for mission-critical applications in extreme environments.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 1200 V
- Drain to Source Voltage (Vdss): 1200 V
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: 33.5 A
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V
- Resistance - RDS(On): 90 mOhms
- Power - Max: 254 W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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