UJ4SC075006K4S
UnitedSiC
UnitedSiC
750V/6MOHM, SIC, STACKED CASCODE
$70.31
Available to order
Reference Price (USD)
1+
$70.31000
500+
$69.6069
1000+
$68.9038
1500+
$68.2007
2000+
$67.4976
2500+
$66.7945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the UJ4SC075006K4S single MOSFET from UnitedSiC. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the UJ4SC075006K4S combines cutting-edge technology with UnitedSiC's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 714W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
Related Products
Vishay Siliconix
SIHB24N65ET5-GE3
Fairchild Semiconductor
RFP15N05L
Fairchild Semiconductor
FQPF19N10L
Toshiba Semiconductor and Storage
SSM3J133TU,LF
STMicroelectronics
STF6N60DM2
Nexperia USA Inc.
BUK7610-100B,118
Diodes Incorporated
DMN3010LSS-13
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL3134K-F2-0000HF
Vishay Siliconix
SIDR5102EP-T1-RE3
onsemi