UJ4SC075018B7S
UnitedSiC
UnitedSiC
750V/18MOHM, N-OFF SIC STACK CAS
$20.74
Available to order
Reference Price (USD)
1+
$20.74000
500+
$20.5326
1000+
$20.3252
1500+
$20.1178
2000+
$19.9104
2500+
$19.703
Exquisite packaging
Discount
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Upgrade your designs with the UJ4SC075018B7S by UnitedSiC, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the UJ4SC075018B7S is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 259W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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