ULN2067B
STMicroelectronics
STMicroelectronics
TRANS 4NPN DARL 80V 1.75A 16DIP
$6.80
Available to order
Reference Price (USD)
1+
$2.85000
25+
$2.41520
100+
$2.05760
500+
$1.69050
1,000+
$1.40070
Exquisite packaging
Discount
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The ULN2067B BJT Array from STMicroelectronics brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The ULN2067B undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: 4 NPN Darlington (Quad)
- Current - Collector (Ic) (Max): 1.75A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 16-PowerDIP (0.300", 7.62mm)
- Supplier Device Package: 16-PowerDIP (20x7.10)
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