ULN2803APG,CN
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 8NPN DARL 50V 0.5A 18DIP
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The ULN2803APG,CN by Toshiba Semiconductor and Storage redefines efficiency in Bipolar Transistor Arrays with its ultra-low noise characteristics. Perfect for RF modules, oscillators, and ADC/DAC circuits, this Discrete Semiconductor Product minimizes signal distortion in high-frequency applications. Automotive infotainment systems and IoT devices benefit from its fast response time and energy-saving operation. Backed by Toshiba Semiconductor and Storage s quality assurance, the ULN2803APG,CN guarantees 100% testing for parameter consistency across all arrayed transistors.
Specifications
- Product Status: Obsolete
- Transistor Type: 8 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: 1.47W
- Frequency - Transition: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 18-DIP (0.300", 7.62mm)
- Supplier Device Package: 18-DIP
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