UMC5NQ-7
Diodes Incorporated
Diodes Incorporated
PREBIASTRANSISTORSOT353
$0.41
Available to order
Reference Price (USD)
3,000+
$0.07912
6,000+
$0.07190
15,000+
$0.06467
30,000+
$0.06106
75,000+
$0.05504
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The UMC5NQ-7 from Diodes Incorporated is a versatile pre-biased BJT array designed to meet the needs of diverse electronic applications. Featuring matched transistors and built-in resistors, this product enhances circuit performance while reducing design complexity. It is commonly used in audio amplifiers, power converters, and automotive electronics. Diodes Incorporated's commitment to quality ensures that the UMC5NQ-7 operates flawlessly in both commercial and industrial settings. With its excellent thermal performance and high reliability, this transistor array is an essential component for any engineer's toolkit.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 290mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: SOT-353
Related Products
onsemi
NSVMUN5233DW1T3G
Nexperia USA Inc.
PUMH13F
Nexperia USA Inc.
PEMD30,315
Nexperia USA Inc.
PBLS2023D,115
Infineon Technologies
BCR523UE6433HTMA1
Toshiba Semiconductor and Storage
RN4987FE,LXHF(CT
Toshiba Semiconductor and Storage
RN4990FE,LXHF(CT
Nexperia USA Inc.
PEMD6,115
Toshiba Semiconductor and Storage
RN2906FE(TE85L,F)
Toshiba Semiconductor and Storage