UMT18NTR
Rohm Semiconductor
Rohm Semiconductor
PNP+PNP LOW VCE(SAT) TRANSISTOR
$0.43
Available to order
Reference Price (USD)
3,000+
$0.13200
6,000+
$0.12400
15,000+
$0.11600
30,000+
$0.11200
Exquisite packaging
Discount
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Engineered for reliability, the UMT18NTR BJT Array from Rohm Semiconductor delivers unmatched performance in Discrete Semiconductor Products. Its optimized gain bandwidth and low saturation voltage cater to demanding applications like sensor interfaces, relay drivers, and H-bridge circuits. The UMT18NTR shines in medical equipment and aerospace systems where precision is critical. This product s hermetically sealed packaging ensures longevity even in harsh environments, making it a trusted component for mission-critical designs.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
- Power - Max: 150mW
- Frequency - Transition: 260MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
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