UNR921MJ0L
Panasonic Electronic Components
Panasonic Electronic Components
TRANS PREBIAS NPN 125MW SSMINI3
$0.20
Available to order
Reference Price (USD)
3,000+
$0.06391
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The UNR921MJ0L from Panasonic Electronic Components is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased transistor simplifies circuit design by integrating resistors, reducing component count and board space. Ideal for switching and amplification, it offers excellent thermal stability and low saturation voltage. Common applications include LED drivers, relay switches, and audio amplifiers. Trust Panasonic Electronic Components's expertise in discrete semiconductors for reliable performance in industrial and consumer electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150 MHz
- Power - Max: 125 mW
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F1
Related Products
Rohm Semiconductor
DTB123YCHZGT116
Nexperia USA Inc.
NHDTA114EUX
Rohm Semiconductor
DTA114TETL
Infineon Technologies
BCR142WH6327XTSA1
onsemi
DTC144TET1G
Toshiba Semiconductor and Storage
RN1101MFV,L3F
Toshiba Semiconductor and Storage
RN1416,LXHF
onsemi
MUN5235T1G
onsemi
NSVDTA123EM3T5G
Toshiba Semiconductor and Storage