UPA2810T1L-E2-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 30V 13A 8DFN
$1.01
Available to order
Reference Price (USD)
1+
$1.01000
500+
$0.9999
1000+
$0.9898
1500+
$0.9797
2000+
$0.9696
2500+
$0.9595
Exquisite packaging
Discount
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The UPA2810T1L-E2-AY from Renesas Electronics America Inc redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the UPA2810T1L-E2-AY offers the precision and reliability you need. Trust Renesas Electronics America Inc to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3333 (3.3x3.3)
- Package / Case: 8-VDFN Exposed Pad
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