UPA806T-T1-A
Renesas
Renesas
NPN SILICON AMPLIFIER AND OSCILL
$2.80
Available to order
Reference Price (USD)
1+
$2.80000
500+
$2.772
1000+
$2.744
1500+
$2.716
2000+
$2.688
2500+
$2.66
Exquisite packaging
Discount
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Enhance your RF designs with the UPA806T-T1-A, a high-efficiency Bipolar Junction Transistor (BJT) from Renesas. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The UPA806T-T1-A features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust Renesas for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Last Time Buy
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 12GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
- Gain: 8.5dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-SuperMiniMold
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