US1BHE3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO214AC
$0.12
Available to order
Reference Price (USD)
7,500+
$0.11222
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The US1BHE3_A/I from Vishay General Semiconductor - Diodes Division is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Vishay General Semiconductor - Diodes Division's dedication to quality means the US1BHE3_A/I meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Micro Commercial Co
SD101AW-TP
GeneSiC Semiconductor
MBR3540
Nexperia USA Inc.
PMEG6010AESBYL
Panjit International Inc.
SS19L_R1_00001
Taiwan Semiconductor Corporation
ESJLW
IXYS
DSEI30-10A
onsemi
BAS16LT3G
Comchip Technology
ACGRBT302-HF
Vishay General Semiconductor - Diodes Division
ESH3C-M3/57T
Vishay General Semiconductor - Diodes Division