V35PWM10HM3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 35A SLIMDPAK
$1.46
Available to order
Reference Price (USD)
4,500+
$0.65624
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The V35PWM10HM3/I by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The V35PWM10HM3/I is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the V35PWM10HM3/I delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 35 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800 µA @ 100 V
- Capacitance @ Vr, F: 2500pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: SlimDPAK
- Operating Temperature - Junction: -40°C ~ 175°C
Related Products
Vishay General Semiconductor - Diodes Division
S5GHM3/57T
Comchip Technology
CDBZ5T1045-HF
Diodes Incorporated
DFLS140LQ-7
NTE Electronics, Inc
NTE109
STMicroelectronics
STTH212U
Panjit International Inc.
ES1D_R1_00001
Diotec Semiconductor
FT2000KB
Yangzhou Yangjie Electronic Technology Co.,Ltd
E1JFS-F1-0000HF
Panjit International Inc.
BD5200S_S2_00001
Micro Commercial Co