V60170G-M3/4W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 170V TO220
$3.76
Available to order
Reference Price (USD)
1+
$3.72000
50+
$3.19660
100+
$2.81010
500+
$2.43622
1,000+
$2.10107
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your circuitry with the V60170G-M3/4W by Vishay General Semiconductor - Diodes Division, a top-tier rectifier diode array from the Diodes - Rectifiers - Arrays subcategory. Engineered for precision and reliability, this component features fast switching and high current capacity, making it perfect for AC/DC conversion and voltage regulation. Common applications include welding machines, battery chargers, and renewable energy systems. With Vishay General Semiconductor - Diodes Division's commitment to quality, the V60170G-M3/4W stands out as a robust solution for engineers seeking optimal performance in harsh environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 170 V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 450 µA @ 170 V
- Operating Temperature - Junction: -40°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
Related Products
Fairchild Semiconductor
FFPF06U40DPTU
Comchip Technology
MBR2040CT-G
Diodes Incorporated
BAT54S-7-F
Panjit International Inc.
BAV99W_R1_00001
Rohm Semiconductor
RBR30NS30ATL
Micro Commercial Co
BAS21S-TP
Vishay General Semiconductor - Diodes Division
MBRB10100CT-E3/4W
GeneSiC Semiconductor
FST12045
Taiwan Semiconductor Corporation
TSF30H60C
GeneSiC Semiconductor