VB20100S-E3/8W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 20A TO263AB
$1.65
Available to order
Reference Price (USD)
1+
$1.65000
500+
$1.6335
1000+
$1.617
1500+
$1.6005
2000+
$1.584
2500+
$1.5675
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VB20100S-E3/8W by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The VB20100S-E3/8W is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the VB20100S-E3/8W delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -40°C ~ 150°C
Related Products
Taiwan Semiconductor Corporation
SFF2008G
Panjit International Inc.
MBR5100_R2_00001
IXYS
DSDI60-14A
GeneSiC Semiconductor
FR70GR02
Vishay General Semiconductor - Diodes Division
AR4PK-M3/87A
onsemi
NRVTS10120EMFST1G
Vishay General Semiconductor - Diodes Division
SS14-E3/5AT
Global Power Technology-GPT
G3S06510A
Vishay General Semiconductor - Diodes Division
1N6479HE3/97
Infineon Technologies