VB20120S-E3/4W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 120V 20A TO263AB
$0.64
Available to order
Reference Price (USD)
1,000+
$0.67228
Exquisite packaging
Discount
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Maximize your device's efficiency with the VB20120S-E3/4W single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is crafted for precision, offering fast recovery times and high current handling. It is ideal for use in power supplies, motor controls, and lighting systems, where energy efficiency is crucial. The VB20120S-E3/4W is also employed in agricultural machinery and marine electronics, proving its versatility across industries. Vishay General Semiconductor - Diodes Division's VB20120S-E3/4W is synonymous with reliability, making it a trusted choice for engineers worldwide.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 120 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -40°C ~ 150°C
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