VB20M120C-M3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
20A 120V TO-263 TRENCH SKY RECT
$0.91
Available to order
Reference Price (USD)
1+
$0.91229
500+
$0.9031671
1000+
$0.8940442
1500+
$0.8849213
2000+
$0.8757984
2500+
$0.8666755
Exquisite packaging
Discount
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Engineered for excellence, Vishay General Semiconductor - Diodes Division's VB20M120C-M3/I represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With Vishay General Semiconductor - Diodes Division's proprietary screening processes, the VB20M120C-M3/I guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 910 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700 µA @ 120 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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