VBT3080S-E3/8W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30A 80V TO-263AB
$1.32
Available to order
Reference Price (USD)
1+
$1.32000
500+
$1.3068
1000+
$1.2936
1500+
$1.2804
2000+
$1.2672
2500+
$1.254
Exquisite packaging
Discount
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The VBT3080S-E3/8W by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The VBT3080S-E3/8W is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the VBT3080S-E3/8W delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 80 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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