VESD33C1-HD1HG3-08
Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division
33V;IR=0.1UA;IP=1.6A;P=W;CD=18PF
$0.47
Available to order
Reference Price (USD)
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$0.47000
500+
$0.4653
1000+
$0.4606
1500+
$0.4559
2000+
$0.4512
2500+
$0.4465
Exquisite packaging
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Optimize your circuit protection with the VESD33C1-HD1HG3-08 TVS diode from Vishay General Semiconductor - Diodes Division. This diode excels in clamping transient voltages and ensuring system integrity. TVS diodes are crucial in applications ranging from consumer electronics to military hardware. They provide robust defense against voltage surges, such as those caused by lightning or switching loads. For example, the VESD33C1-HD1HG3-08 can protect military communication systems from transient interference. Vishay General Semiconductor - Diodes Division offers top-grade TVS diodes engineered for superior performance and reliability.
Specifications
- Product Status: Active
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 33V (Max)
- Voltage - Breakdown (Min): 37V
- Voltage - Clamping (Max) @ Ipp: 62.5V
- Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
- Power - Peak Pulse: 100W
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: 15pF @ 1MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: DFN1006-2A