VI20120S-M3/4W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 120V TO-262AA
$0.61
Available to order
Reference Price (USD)
1,000+
$0.55200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VI20120S-M3/4W from Vishay General Semiconductor - Diodes Division is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Vishay General Semiconductor - Diodes Division's VI20120S-M3/4W for superior performance and durability in demanding environments.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 120 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262AA
- Operating Temperature - Junction: -40°C ~ 150°C
Related Products
Panjit International Inc.
MBR2060YD_L2_00001
Taiwan Semiconductor Corporation
HS1GFS
Diotec Semiconductor
S5G
onsemi
NSR02L30NXT5G
SMC Diode Solutions
SD060SE45B.T
Taiwan Semiconductor Corporation
TSUP5M45SH S1G
Panjit International Inc.
ERT1GAFC_R1_00001
Vishay General Semiconductor - Diodes Division
SS16-E3/61T
Microchip Technology
JAN1N4454UR-1
Solid State Inc.