VN2106N3-G
Microchip Technology
Microchip Technology
MOSFET N-CH 60V 300MA TO92-3
$0.52
Available to order
Reference Price (USD)
1+
$0.38000
25+
$0.31920
100+
$0.28840
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the VN2106N3-G single MOSFET from Microchip Technology. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the VN2106N3-G combines cutting-edge technology with Microchip Technology's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Related Products
Fairchild Semiconductor
FDD6688S
Microchip Technology
VN2460N8-G
Linear Integrated Systems, Inc.
SD215DE TO-72 4L
Torex Semiconductor Ltd
XP262N70023R-G
STMicroelectronics
STW33N60M6
Vishay Siliconix
SIHB25N50E-GE3
STMicroelectronics
STF28N60M2
Infineon Technologies
AUIRF7799L2TR
Harris Corporation
RF1S50N06
Toshiba Semiconductor and Storage