VS-10ETF12STRR-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 10A D2PAK
$1.15
Available to order
Reference Price (USD)
800+
$1.04300
Exquisite packaging
Discount
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The VS-10ETF12STRR-M3 single rectifier diode by Vishay General Semiconductor - Diodes Division is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The VS-10ETF12STRR-M3 is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. Vishay General Semiconductor - Diodes Division's VS-10ETF12STRR-M3 is the ultimate solution for high-performance rectification needs.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 310 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -40°C ~ 150°C
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