VS-8EWF12STRL-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 8A D-PAK
$2.02
Available to order
Reference Price (USD)
1+
$2.01597
500+
$1.9958103
1000+
$1.9756506
1500+
$1.9554909
2000+
$1.9353312
2500+
$1.9151715
Exquisite packaging
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Discover the VS-8EWF12STRL-M3 single rectifier diode by Vishay General Semiconductor - Diodes Division, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The VS-8EWF12STRL-M3 is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose Vishay General Semiconductor - Diodes Division's VS-8EWF12STRL-M3 for unmatched quality and performance in discrete semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 270 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -40°C ~ 150°C
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