VS-8EWH06FNTRR-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A D-PAK
$0.50
Available to order
Reference Price (USD)
3,000+
$0.42266
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-8EWH06FNTRR-M3 from Vishay General Semiconductor - Diodes Division is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Vishay General Semiconductor - Diodes Division's VS-8EWH06FNTRR-M3 for superior performance and durability in demanding environments.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Vishay General Semiconductor - Diodes Division
VS-SD800C45L
Panjit International Inc.
1N5817_R2_00001
Rohm Semiconductor
RB411VAM-50TR
Rectron USA
EFM102-W
onsemi
NRVB560MFST1G
Vishay General Semiconductor - Diodes Division
BYT51K-TR
Taiwan Semiconductor Corporation
S1KFS MWG
Vishay General Semiconductor - Diodes Division
SL03-GS08
Nexperia USA Inc.
PMEG4002EB,115
Vishay General Semiconductor - Diodes Division