VS-8EWS12STR-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 8A D-PAK
$3.12
Available to order
Reference Price (USD)
2,000+
$1.56627
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize your device's efficiency with the VS-8EWS12STR-M3 single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is crafted for precision, offering fast recovery times and high current handling. It is ideal for use in power supplies, motor controls, and lighting systems, where energy efficiency is crucial. The VS-8EWS12STR-M3 is also employed in agricultural machinery and marine electronics, proving its versatility across industries. Vishay General Semiconductor - Diodes Division's VS-8EWS12STR-M3 is synonymous with reliability, making it a trusted choice for engineers worldwide.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Micro Commercial Co
SK510BHE3-LTP
Vishay General Semiconductor - Diodes Division
U2D-E3/52T
NTE Electronics, Inc
NTE622
Diotec Semiconductor
S2M-Q-CT
Panjit International Inc.
S3J_R1_00001
Comchip Technology
CDBT-54-HF
Comchip Technology
CURN103-HF
Diotec Semiconductor
USL1D
Diodes Incorporated
1N4448HWS-13-F
Littelfuse Inc.