VS-8EWS12STRL-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 8A D-PAK
$1.59
Available to order
Reference Price (USD)
3,000+
$1.56627
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-8EWS12STRL-M3 by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The VS-8EWS12STRL-M3 is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the VS-8EWS12STRL-M3 delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
SMC Diode Solutions
SDURD520
Microchip Technology
1N5618US/TR
Micro Commercial Co
SL210A-TP
onsemi
MBRA210LT3G
Diotec Semiconductor
ES2DSMA
Vishay General Semiconductor - Diodes Division
AU2PMHM3_A/H
Panjit International Inc.
PG201R_R2_00001
Vishay General Semiconductor - Diodes Division
AR4PMHM3_A/I
Vishay General Semiconductor - Diodes Division
BYG21K-M3/TR
Microchip Technology