VS-C10ET07T-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 650V 10A TO220AC
$4.26
Available to order
Reference Price (USD)
1+
$4.26000
500+
$4.2174
1000+
$4.1748
1500+
$4.1322
2000+
$4.0896
2500+
$4.047
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with the VS-C10ET07T-M3 single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the VS-C10ET07T-M3 delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Vishay General Semiconductor - Diodes Division's VS-C10ET07T-M3 is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 55 µA @ 650 V
- Capacitance @ Vr, F: 430pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Infineon Technologies
BAS3010A03WE6327HTSA1
Microchip Technology
1N5195
Vishay General Semiconductor - Diodes Division
SB110-E3/54
PN Junction Semiconductor
P3D12020K3
Diodes Incorporated
LSC02120FW
Panjit International Inc.
UF1004F_T0_00001
Global Power Technology-GPT
G3S06506H
Diodes Incorporated
PDS4150Q-13
Panjit International Inc.
SK23F_R2_00001
Diotec Semiconductor