VS-C4PH6006L-N3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 30A TO247AD
$2.47
Available to order
Reference Price (USD)
1+
$2.41000
25+
$2.07480
100+
$1.79360
500+
$1.50480
1,000+
$1.27680
2,500+
$1.23880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the VS-C4PH6006L-N3 single rectifier diode by Vishay General Semiconductor - Diodes Division, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The VS-C4PH6006L-N3 is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose Vishay General Semiconductor - Diodes Division's VS-C4PH6006L-N3 for unmatched quality and performance in discrete semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Micro Commercial Co
SK18-LTP
Rohm Semiconductor
RB521SM-40FHT2R
GeneSiC Semiconductor
GKR240/18
Taiwan Semiconductor Corporation
S1KL R3G
SemiQ
GP3D012A065A
Microchip Technology
JANTX1N5188/TR
Infineon Technologies
D2601NH90TXPSA1
Global Power Technology-GPT
G3S12010A
Nexperia USA Inc.
PMEG6010ETR-QX
Micro Commercial Co