VS-GT100NA120UX
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 134A 463W SOT227
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay General Semiconductor - Diodes Division's VS-GT100NA120UX stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the VS-GT100NA120UX enables higher power density in MRI gradient amplifiers. Choose Vishay General Semiconductor - Diodes Division for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 134 A
- Power - Max: 463 W
- Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
Related Products
Vishay General Semiconductor - Diodes Division
VS-GB90SA120U
Powerex Inc.
CM75E3U-12H
Vishay General Semiconductor - Diodes Division
VS-GT105NA120UX
Powerex Inc.
MG400V2YS60A
Infineon Technologies
6PS04512E43G37986NOSA1
Infineon Technologies
FS100R17KS4F
Infineon Technologies
DDB2U30N08VRBOMA1
Littelfuse Inc.
MG12200D-BA1MM
Fairchild Semiconductor
FMG2G300LS60E
Microsemi Corporation