VS-GT100TP60N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 160A INT-A-PAK
$79.33
Available to order
Reference Price (USD)
24+
$209.29708
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Vishay General Semiconductor - Diodes Division's VS-GT100TP60N, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The VS-GT100TP60N performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Vishay General Semiconductor - Diodes Division's VS-GT100TP60N, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 160 A
- Power - Max: 417 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 7.71 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3 + 4)
- Supplier Device Package: INT-A-PAK
Related Products
Infineon Technologies
BSM300GA120DLCHOSA1
Infineon Technologies
FS25R12KE3GBPSA1
Infineon Technologies
FZ2400R17HP4B9HOSA2
IXYS
MIEB101W1200EH
Infineon Technologies
BSM150GB170DN2E3256HDLA1
Microchip Technology
APTGT35A120T1G
Infineon Technologies
FF150R12YT3BOMA1
Infineon Technologies
FP35R12W2T7BPSA1
Infineon Technologies
BSM50GD120DN2BPSA1
Infineon Technologies