VS-GT80DA60U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 123A 454W SOT227
$22.97
Available to order
Reference Price (USD)
1+
$22.96800
500+
$22.73832
1000+
$22.50864
1500+
$22.27896
2000+
$22.04928
2500+
$21.8196
Exquisite packaging
Discount
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Experience next-generation power control with Vishay General Semiconductor - Diodes Division's VS-GT80DA60U IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The VS-GT80DA60U offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the VS-GT80DA60U in your next-generation HVDC systems or particle accelerator power supplies. Vishay General Semiconductor - Diodes Division delivers reliability where it matters most with the VS-GT80DA60U IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 123 A
- Power - Max: 454 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 80A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 10.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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