VS-GT90DA120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
SOT-227 - SINGLE SWITCH IGBT + A
$39.14
Available to order
Reference Price (USD)
1+
$39.14000
500+
$38.7486
1000+
$38.3572
1500+
$37.9658
2000+
$37.5744
2500+
$37.183
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-GT90DA120U from Vishay General Semiconductor - Diodes Division exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the VS-GT90DA120U in megawatt-level wind turbine converters. With Vishay General Semiconductor - Diodes Division's proven track record, the VS-GT90DA120U represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 169 A
- Power - Max: 781 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
Related Products
Microchip Technology
APTGT150DU120G
Microchip Technology
APT200GN60J
Infineon Technologies
FD200R12PT4B6BOSA1
Infineon Technologies
DDB6U75N16W1RB11BOMA1
Infineon Technologies
FF900R12IP4BOSA2
Infineon Technologies
FF23MR12W1M1PB11BPSA1
Infineon Technologies
FP75R12KT3BOSA1
Infineon Technologies
F450R12KS4B11BOSA1
Infineon Technologies
FF600R12IP4BOSA1
Microchip Technology