VS-MBR20100CT-1HM3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO262
$0.91
Available to order
Reference Price (USD)
1,000+
$0.92888
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Vishay General Semiconductor - Diodes Division's VS-MBR20100CT-1HM3, a game-changing diode array in the Discrete Semiconductor Products category. Specifically engineered for high-frequency rectification, this component minimizes switching losses in SMPS and RF circuits. Its hermetically sealed package provides exceptional moisture resistance for outdoor applications like traffic signal systems and railway electronics. Trust Vishay General Semiconductor - Diodes Division's decades of semiconductor expertise embedded in every VS-MBR20100CT-1HM3 for uncompromising performance.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 100 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262-3
Related Products
Littelfuse Inc.
DSTF20120C
STMicroelectronics
STTH30L06CW
GeneSiC Semiconductor
MBR2X030A045
Vishay General Semiconductor - Diodes Division
VS-16CTQ100-1-M3
Global Power Technology-GPT
G5S12020B
Vishay General Semiconductor - Diodes Division
VS-25CTQ035STRR-M3
Vishay General Semiconductor - Diodes Division
MBRB30H60CTHE3_B/P
Vishay General Semiconductor - Diodes Division
VI20202G-M3/4W
GeneSiC Semiconductor
MBR30045CT
STMicroelectronics