W66BM6NBUAGJ TR
Winbond Electronics
Winbond Electronics
2GB LPDDR4X, X16, 1866MHZ, -40C~
$5.94
Available to order
Reference Price (USD)
1+
$5.94000
500+
$5.8806
1000+
$5.8212
1500+
$5.7618
2000+
$5.7024
2500+
$5.643
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The W66BM6NBUAGJ TR Memory IC by Winbond Electronics is a state-of-the-art solution for data storage and retrieval. Belonging to the Memory category, this IC is engineered to provide high-speed access and large storage capacities, making it ideal for advanced electronic applications. Its robust design ensures durability and consistent performance.
Memory ICs, such as the W66BM6NBUAGJ TR, are distinguished by their ability to handle large datasets efficiently. These components are essential for systems that demand quick and reliable memory operations. The W66BM6NBUAGJ TR features advanced technology that minimizes latency and maximizes throughput, catering to high-performance requirements.
Applications of the W66BM6NBUAGJ TR include data centers, wearable technology, and automotive infotainment systems. For instance, it is used in enterprise servers to support massive data processing and in smartwatches for efficient data management. The W66BM6NBUAGJ TR is a reliable and high-performing Memory IC for various cutting-edge applications.
Specifications
- Product Status: Not For New Designs
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gb (128M x 16)
- Memory Interface: LVSTL_11
- Clock Frequency: 1.866 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
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