W66BP6NBUAFJ TR
Winbond Electronics

Winbond Electronics
2GB LPDDR4, X16, 1600MHZ, -40C~1
$5.01
Available to order
Reference Price (USD)
1+
$5.00870
500+
$4.958613
1000+
$4.908526
1500+
$4.858439
2000+
$4.808352
2500+
$4.758265
Exquisite packaging
Discount
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The W66BP6NBUAFJ TR Memory IC by Winbond Electronics is a state-of-the-art solution for data storage and retrieval. Belonging to the Memory category, this IC is engineered to provide high-speed access and large storage capacities, making it ideal for advanced electronic applications. Its robust design ensures durability and consistent performance.
Memory ICs, such as the W66BP6NBUAFJ TR, are distinguished by their ability to handle large datasets efficiently. These components are essential for systems that demand quick and reliable memory operations. The W66BP6NBUAFJ TR features advanced technology that minimizes latency and maximizes throughput, catering to high-performance requirements.
Applications of the W66BP6NBUAFJ TR include data centers, wearable technology, and automotive infotainment systems. For instance, it is used in enterprise servers to support massive data processing and in smartwatches for efficient data management. The W66BP6NBUAFJ TR is a reliable and high-performing Memory IC for various cutting-edge applications.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 2Gb (128M x 16)
- Memory Interface: LVSTL_11
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)