W66BP6NBUAGJ TR
Winbond Electronics
Winbond Electronics
2GB LPDDR4, X16, 1866MHZ, -40C~1
$5.28
Available to order
Reference Price (USD)
1+
$5.28273
500+
$5.2299027
1000+
$5.1770754
1500+
$5.1242481
2000+
$5.0714208
2500+
$5.0185935
Exquisite packaging
Discount
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Experience top-tier performance with the W66BP6NBUAGJ TR Memory IC from Winbond Electronics, a standout in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the requirements of advanced electronic systems. Its innovative architecture ensures efficiency and reliability.
The W66BP6NBUAGJ TR exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The W66BP6NBUAGJ TR provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The W66BP6NBUAGJ TR is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 2Gb (128M x 16)
- Memory Interface: LVSTL_11
- Clock Frequency: 1.866 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
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