W979H6KBVX2E TR
Winbond Electronics

Winbond Electronics
IC DRAM 512MBIT PAR 134VFBGA
$4.82
Available to order
Reference Price (USD)
3,500+
$3.30184
Exquisite packaging
Discount
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Discover the W979H6KBVX2E TR Memory IC by Winbond Electronics, a cutting-edge solution for your data storage needs. This IC is part of the Memory category, known for its high-density storage and rapid data transfer rates. The W979H6KBVX2E TR is engineered to meet the demands of advanced electronic systems, offering superior performance and energy efficiency.
Memory ICs, including the W979H6KBVX2E TR, are characterized by their ability to store and retrieve data quickly and accurately. These components are vital for systems that require frequent data access, such as computing and communication devices. The W979H6KBVX2E TR stands out with its low latency, high bandwidth, and reliable operation under varying conditions.
Applications of the W979H6KBVX2E TR span across industries, including telecommunications, medical devices, and industrial automation. For example, it is used in servers for data centers, ensuring fast and secure data handling, and in medical equipment where precision and reliability are paramount. The W979H6KBVX2E TR is a trusted choice for professionals seeking high-quality Memory ICs.
Specifications
- Product Status: Not For New Designs
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14V ~ 1.95V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-VFBGA
- Supplier Device Package: 134-VFBGA (10x11.5)