W987D2HBJX6E TR
Winbond Electronics

Winbond Electronics
IC DRAM 128MBIT PARALLEL 90VFBGA
$2.67
Available to order
Reference Price (USD)
2,500+
$2.18391
Exquisite packaging
Discount
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Enhance your projects with the W987D2HBJX6E TR Memory IC from Winbond Electronics, a top-tier component in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the needs of sophisticated electronic systems. Its innovative design ensures optimal performance and energy efficiency.
The W987D2HBJX6E TR exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The W987D2HBJX6E TR provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The W987D2HBJX6E TR is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Last Time Buy
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPSDR
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.4 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-VFBGA (8x13)