WAS350M12BM3
Wolfspeed, Inc.
Wolfspeed, Inc.
SIC, MODULE, 350A, 1200V, 62MM,
$913.52
Available to order
Reference Price (USD)
1+
$913.52000
500+
$904.3848
1000+
$895.2496
1500+
$886.1144
2000+
$876.9792
2500+
$867.844
Exquisite packaging
Discount
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Discover the high-performance WAS350M12BM3 from Wolfspeed, Inc., a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the WAS350M12BM3 delivers unmatched performance. Trust Wolfspeed, Inc.'s cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 85mA
- Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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