WNSC201200WQ
WeEn Semiconductors
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$9.68
Available to order
Reference Price (USD)
1+
$9.67670
500+
$9.579933
1000+
$9.483166
1500+
$9.386399
2000+
$9.289632
2500+
$9.192865
Exquisite packaging
Discount
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The WNSC201200WQ by WeEn Semiconductors is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The WNSC201200WQ is also used in smart home devices and wearable technology, ensuring seamless operation. WeEn Semiconductors's expertise in semiconductor technology guarantees that the WNSC201200WQ delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 220 µA @ 1200 V
- Capacitance @ Vr, F: 1.02nF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: 175°C (Max)
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