YJL2312A-F2-0100HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 20V 6.8A SOT-23-3L
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
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Optimize your power electronics with the YJL2312A-F2-0100HF single MOSFET from Yangzhou Yangjie Electronic Technology Co.,Ltd. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the YJL2312A-F2-0100HF combines cutting-edge technology with Yangzhou Yangjie Electronic Technology Co.,Ltd's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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