ZC835ATC
Diodes Incorporated
Diodes Incorporated
DIODE VAR CAPACITANCE SOT23-3
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ZC835ATC Variable Capacitance Diodes by Diodes Incorporated represent the next evolution in RF tuning components. These Varactors feature patented hyperabrupt junction technology for unprecedented linearity in phase noise-sensitive applications like atomic clocks and MRI machines. The copper-tungsten carrier provides excellent heat dissipation for high-power RF amplifiers. With typical applications including satellite payloads, electronic countermeasures, and terahertz research, ZC835ATC is the preferred choice when performance margins matter most. Each diode undergoes rigorous QPL testing to ensure military-grade reliability.
Specifications
- Product Status: Obsolete
- Capacitance @ Vr, F: 74.8pF @ 2V, 1MHz
- Capacitance Ratio: 6.5
- Capacitance Ratio Condition: C2/C20
- Voltage - Peak Reverse (Max): 25 V
- Diode Type: Single
- Q @ Vr, F: 100 @ 3V, 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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